? 2014 ixys corporation, all rights reserved 650v xpt tm igbt genx3 tm v ces = 650v i c110 = 100a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 1.80v t fi(typ) = 122ns symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 170 a i c110 t c = 110c 100 a i cm t c = 25c, 1ms 460 a i a t c = 25c 50 a e as t c = 25c 600 mj ssoa v ge = 15v, t vj = 150c, r g = 2 ? i cm = 200 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 600 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c v isol 50/60hz t = 1min 2500 v~ i isol ? 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in terminal connection torque 1.3/11.5 nm/lb.in weight 30 g ds100547a(7/14) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 650 v v ge(th) i c = 250 a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 25 a t j = 150c 500 a i ges v ce = 0v, v ge = 20v 200 na v ce(sat) i c = 70a, v ge = 15v, note 1 1.44 1.80 v t j = 150c 1.62 v features ? optimized for low conduction losses ? minibloc, with aluminium nitride isolation ? international standard package ? isolation voltage 2500 v~ ? optimized for up to 5khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? high current handling capability advantages ? high power density ? low gate drive requirement applications ? ups ? motor drives ? smps ? battery chargers ? low frequency power inverters ultra low-vsat pt igbt for up to 5khz switching IXYN100N65A3 sot-227b, minibloc g = gate, c = collector, e = emitter either emitter terminal can be used as main or kelvin emitter g e ? ? e ? c ? ? ? ? ? e153432 e preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYN100N65A3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 32 52 s c ies 4920 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 290 pf c res 100 pf q g(on) 166 nc q ge i c = 70a, v ge = 15v, v ce = 0.5 ? v ces 35 nc q gc 73 nc t d(on) 30 ns t ri 39 ns e on 2.0 mj t d(off) 155 ns t fi 122 ns e off 1.6 mj t d(on) 28 ns t ri 40 ns e on 2.6 mj t d(off) 200 ns t fi 160 ns e off 2.4 mj r thjc 0.25 c/w r thcs 0.05 c/w notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c ? c = 50a, v ge = 15v v ce = 400v, r g = 2 ? note 2 inductive load, t j = 25c i c = 50a, v ge = 15v v ce = 400v, r g = 2 ? note 2 sot-227b minibloc (ixyn) prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2014 ixys corporation, all rights reserved IXYN100N65A3 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 9v 7v 8v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 10v 11v 12v 8v 7v 9v 13v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 00.511.5 22.533.5 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 8v 9v 7v 6v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 70a i c = 35a i c = 140a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 140a t j = 25oc 70a 35a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 567891011 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYN100N65A3 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 160 180 200 220 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 220 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v ge - volts v ce = 325v i c = 70a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. forward-bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limi t 100s 100ms
? 2014 ixys corporation, all rights reserved IXYN100N65A3 fig. 13. inductive switching energy loss vs. gate resistance 1 2 3 4 5 6 2468101214 r g - ohms e off - millijoules 1 3 5 7 9 11 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. gate resistance 80 100 120 140 160 180 200 220 23456789101112131415 r g - ohms t f i - nanoseconds 140 180 220 260 300 340 380 420 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 14. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 7 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 17. inductive turn-off switching times vs. collector current 40 60 80 100 120 140 160 180 200 220 240 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanosecond s 60 100 140 180 220 260 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 200 220 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 80 100 120 140 160 180 200 220 240 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXYN100N65A3 ixys ref: ixy_100n65a3(7d) 7-16-13 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanosecond s 24 26 28 30 32 34 36 38 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 22 24 26 28 30 32 34 36 38 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 19. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 180 23456789101112131415 r g - ohms t r i - nanosecond s 20 28 36 44 52 60 68 76 84 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 50a i c = 100a
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